Transport of Nitrogen Atoms During the Liquid Phase Epitaxial Growth of InGaAsN

  • D. P. SamajdarEmail author
  • S. Dhar
Conference paper
Part of the Environmental Science and Engineering book series (ESE)


A mathematical model has been used to study the concentration profile of the nitrogen atoms during the liquid phase epitaxial growth of InGaAsN. This model is based on the one dimensional diffusive transport of the nitrogen atoms at equally spaced layers in the proximity of the grown epitaxial interface. Various growth parameters such as growth temperature, melt supercooling and the continuous cooling ramp applied during growth have been optimized to find out the suitable conditions of growth. We have also estimated the thickness of the epitaxial layers as a function of time.


LPE Supercooling Cooling rate InGaAsN 


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The authors are thankful to Mr. S. C. Das for some assistance in the work. The work was supported by the ‘University with Potential for Excellence’ scheme of the University of Calcutta.


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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Department of Electronics and Communication EngineerinHeritage Institute of TechnologyKolkataIndia
  2. 2.Department of Electronic ScienceUniversity of CalcuttaKolkataIndia

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