Abstract
A mathematical model has been used to study the concentration profile of the nitrogen atoms during the liquid phase epitaxial growth of InGaAsN. This model is based on the one dimensional diffusive transport of the nitrogen atoms at equally spaced layers in the proximity of the grown epitaxial interface. Various growth parameters such as growth temperature, melt supercooling and the continuous cooling ramp applied during growth have been optimized to find out the suitable conditions of growth. We have also estimated the thickness of the epitaxial layers as a function of time.
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Acknowledgments
The authors are thankful to Mr. S. C. Das for some assistance in the work. The work was supported by the ‘University with Potential for Excellence’ scheme of the University of Calcutta.
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Samajdar, D.P., Dhar, S. (2014). Transport of Nitrogen Atoms During the Liquid Phase Epitaxial Growth of InGaAsN. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_201
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DOI: https://doi.org/10.1007/978-3-319-03002-9_201
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03001-2
Online ISBN: 978-3-319-03002-9
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