Transport of Nitrogen Atoms During the Liquid Phase Epitaxial Growth of InGaAsN

Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

A mathematical model has been used to study the concentration profile of the nitrogen atoms during the liquid phase epitaxial growth of InGaAsN. This model is based on the one dimensional diffusive transport of the nitrogen atoms at equally spaced layers in the proximity of the grown epitaxial interface. Various growth parameters such as growth temperature, melt supercooling and the continuous cooling ramp applied during growth have been optimized to find out the suitable conditions of growth. We have also estimated the thickness of the epitaxial layers as a function of time.

Keywords

LPE Supercooling Cooling rate InGaAsN 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Notes

Acknowledgments

The authors are thankful to Mr. S. C. Das for some assistance in the work. The work was supported by the ‘University with Potential for Excellence’ scheme of the University of Calcutta.

References

  1. 1.
    A.Krier, Mid-Infrared Semiconductor Optoelectronics (London: Springer) ISBN 1-84628-208-X (2006).Google Scholar
  2. 2.
    M de la Mare, S.C.Das, T.D.Das, S.Dhar and A.Krier, J. Phys. D: Appl. Phys., 44, 315102 (2011).CrossRefGoogle Scholar
  3. 3.
    M.B.Small and J.F. Barnes, J. Cryst. Growth, 5, 9 (1969).Google Scholar
  4. 4.
    I.Crossley and M.B.Small, J. Cryst. Growth, 11, 157(1971).Google Scholar
  5. 5.
    K.Jeganathan, S.Saravanan and K.Baskar, Mater. Chem.Phys.,49, 141(1997).Google Scholar
  6. 6.
    H.S.Carslaw and J.C.Jaeger,Conduction of Heat in Solids (Oxford: Oxford University Press) p 468 (1959).Google Scholar
  7. 7.
    Wilke C R and Chang P 1955 A.I.Ch.E Journal. 1 264Google Scholar
  8. 8.
    Cheng S J, BianX F, Zhang J X, Qin X B and Wang Z H 2003 Materials Letters. 57 4191CrossRefGoogle Scholar
  9. 9.
    P.Santhana Raghavan and R.Dhanasekaran, Mater. Sci. Eng. B, 22, 227(1994).Google Scholar
  10. 10.
    M.G.Astles, Liquid Phase Epitaxial Growth of III-V Compound Semiconductor Materials and their Device Applications (Bristol: Hilger) p 73 (1990)Google Scholar
  11. 11.
    Alchagirov B B, Mozgovoi A G, and Khatsukov A M 2004 High Temperature. 42 1003Google Scholar
  12. 12.
    K.Jeganathan, S.Saravanan, K.Baskar and J.Kumar,Mater. Chem. Phys., 49, 141–45 (1997).Google Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Department of Electronics and Communication EngineerinHeritage Institute of TechnologyKolkataIndia
  2. 2.Department of Electronic ScienceUniversity of CalcuttaKolkataIndia

Personalised recommendations