Calculation of Direct E0 Energy Gaps for III–V–Bi Alloys Using Quantum Dielectric Theory

Part of the Environmental Science and Engineering book series (ESE)

Abstract

A mathematical model based on Quantum Dielectric Theory has been used to calculate the direct E0 energy gaps of bismuth containing ternary alloys. The variation of E0 with x for In Sb1–xBix and GaSb1–xBix are in good agreement with the experimental results. The composition dependence of E0 at different temperatures is also found out for some other ternary alloys like InPBi and AlSbBi.

Keywords

Direct band gap QDT and covalent radius 

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Notes

Acknowledgments

The work was supported by the Department of Science and Technology, Government of India under joint project with the Centre for Materials for Electronic Technology, Hyderabad.

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Department of Electronics and Communication EngineeringHeritage Institute of TechnologyAnandapurIndia
  2. 2.Department of Electronic ScienceUniversity of CalcuttaKolkataIndia

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