Abstract
Recent advances in FinFET technology include fins with tapered sidewalls in addition to conventional vertical sidewall fins. Our 3-D TCAD simulation results suggest that for low to moderately doped fins, vertical sidewall fins have superior electrical performance. Only at extremely high fin doping concentrations could tapered sidewall fins be electrically beneficial.
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© 2014 Springer International Publishing Switzerland
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Dixit, A., Hook, T.B., Johnson, J.B., Nowak, E.J., Murali, K.V. (2014). Impact of Fin Sidewall Taper Angle on Sub-14 nm FinFET Device Performance. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_2
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DOI: https://doi.org/10.1007/978-3-319-03002-9_2
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03001-2
Online ISBN: 978-3-319-03002-9
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