Effect of Vertical and Longitudinal Electric Field on 2DEG of AlGaN/GaN HEMT on Silicon: A Qualitative Reliability Study
Effect of both vertical and longitudinal electric field on AlGaN/GaN HEMT 2DEG channel is studied under long pulses with different duty cycles at two separate VGS (i.e. at +2 and -2 V). The duty cycles of applied pulses are of 100, 50, 5 and 0.5 %. Separate responses are being observed to confirm different non-ideal reliability issues like scatterings, effects of surface states and trapped electrons. It also raises an optimization scenario between available 2DEG concentration in channel and its various scattering and depletion phenomenon.
KeywordsHEMT AlGaN/GaN 2 DEG Reliability
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This work has been supported by “ENS” project, Department of Electronics & Information Technology (DeitY), Government of India at Indian Institute of Technology, Kharagpur. The authors also would like to thank SVT Associates, USA and Prof. Edward Chang, NCTU, Taiwan.
- 3.P. Mukhopadhyay, S Chowdhury, A. Wowchak, A. Drabiran, P. Chow and D. Biswas, J. Vac. Sci. Technol. B 31, 03C132 (2013)Google Scholar