Effect of Vertical and Longitudinal Electric Field on 2DEG of AlGaN/GaN HEMT on Silicon: A Qualitative Reliability Study

  • Ankush Bag
  • Partha Mukhopadhyay
  • Saptarsi Ghosh
  • Palash Das
  • Rahul Kumar
  • Sanjay K. Jana
  • Sanjib Kabi
  • Dhrubes Biswas
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Effect of both vertical and longitudinal electric field on AlGaN/GaN HEMT 2DEG channel is studied under long pulses with different duty cycles at two separate VGS (i.e. at +2 and -2 V). The duty cycles of applied pulses are of 100, 50, 5 and 0.5 %. Separate responses are being observed to confirm different non-ideal reliability issues like scatterings, effects of surface states and trapped electrons. It also raises an optimization scenario between available 2DEG concentration in channel and its various scattering and depletion phenomenon.

Keywords

HEMT AlGaN/GaN 2 DEG Reliability 

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Notes

Acknowledgments

This work has been supported by “ENS” project, Department of Electronics & Information Technology (DeitY), Government of India at Indian Institute of Technology, Kharagpur. The authors also would like to thank SVT Associates, USA and Prof. Edward Chang, NCTU, Taiwan.

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Ankush Bag
    • 1
  • Partha Mukhopadhyay
    • 1
  • Saptarsi Ghosh
    • 1
  • Palash Das
    • 1
  • Rahul Kumar
    • 1
  • Sanjay K. Jana
    • 1
  • Sanjib Kabi
    • 1
  • Dhrubes Biswas
    • 1
    • 2
  1. 1.Advance Technology Development CentreIndian Institute of TechnologyKharagpurIndia
  2. 2.Department of Electrical Communication & Electronics EngineeringIndian Institute of TechnologyKharagpurIndia

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