Impact of Silicon Body Thickness on the Performance of Gate-all-around Silicon Nanowire Field Effect Transistor

  • Richa Gupta
  • Devi Dass
  • Rakesh Prasher
  • Rakesh Vaid
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

As the size of the MOSFET is reduced, various short channel effects (SCEs) appears that degrade its performance. Multigate nanowire FET is one of the novel nanoelectronic devices that overcome these MOSFET limitations. The silicon nanowire field effect transistors with multiple gates around the silicon channel can significantly improve the gate control and are considered to be promising candidates for the next generation transistors. In this paper, we have considered the performance limits of Si nanowire field effect transistors in a Gate All Around (GAA) structure. Furthermore, we have studied the effects of Silicon body thickness on the characteristics of GAA silicon nanowire FET. It has been observed that Si-NWFET afford high drive-current (Ion), high transconductance and hence high gain. Thus, GAA configuration has good control of gate, which reduces the short-channel effects to a great extent.

Keywords

Nanowire FET Gate-all-around SCE’s and transconductance 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Richa Gupta
    • 1
  • Devi Dass
    • 1
  • Rakesh Prasher
    • 1
  • Rakesh Vaid
    • 1
  1. 1.Department of Physics and ElectronicsUniversity of JammuJammuIndia

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