Novel Attributes in Scaling Issues of an InSb-Nanowire Field-Effect Transistor

Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Due to the inherently lower bandgap and larger permittivity of III–V materials, III–V MOSFETs are more susceptible to short-channel effects (SCE). They show promising improvement in drain-induced barrier lowering (DIBL), due to suppressed SCE. In this paper, we present a scaling study of nanowire field-effect transistors (NWFETs) using a two-dimensional model and explore the scaling issues in device performance focusing on transconductance characteristics, output characteristics, average velocity, Switching speed, subthreshold swing and with different gate oxide thicknesses (tox) and nanowire diameters. Also, our results show the output conductance, transconductance, voltage gain and average electron velocity at the top of the barrier get improved in NWFETs with thinner tox and larger nanowire diameter.

Keywords

Nanowire diameter NWFET tox Indium antimonide (InSb) and alumina (Al2O3

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References

  1. 1.
    The International Technology Roadmap for Semiconductor 2006 Update, ITRS Handbook, Online, available at:/http://public.itrs.netS.
  2. 2.
    S.J. Wind and J. Appenzeller, P. Avouris, Physical Review Letters, 91, 058, (2003).Google Scholar
  3. 3.
    Y. Park, S. Rosenblatt, Y. Yaish, V. Sazonova, H. Ustunel, S. Brag, T.A. Arias, P.W. Brouwer and P.L. McEuen, Nano Letters, 4, 517 (2004).CrossRefGoogle Scholar
  4. 4.
    R.Chau et al, IEEE Transactions on Nanotechnology, 4, 153 2005.CrossRefGoogle Scholar
  5. 5.
    Z. Arefinia and A. A. Orouji, Microelectronics Journal, 40, 5 (2009).CrossRefGoogle Scholar
  6. 6.
    Z.Arefinia and A.A.Orouji, Physica E: Low-dimensional System. Nanostructures, 40, 3068 (2008).Google Scholar
  7. 7.
    R.R. Troutman, IEEE Trans. Electron Devices, 26 461, 1979.CrossRefGoogle Scholar
  8. 8.
    S.M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981.Google Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Department of ElectronicsUniversity of JammuJ&KIndia

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