Novel Attributes in Scaling Issues of an InSb-Nanowire Field-Effect Transistor

Abstract

Due to the inherently lower bandgap and larger permittivity of III–V materials, III–V MOSFETs are more susceptible to short-channel effects (SCE). They show promising improvement in drain-induced barrier lowering (DIBL), due to suppressed SCE. In this paper, we present a scaling study of nanowire field-effect transistors (NWFETs) using a two-dimensional model and explore the scaling issues in device performance focusing on transconductance characteristics, output characteristics, average velocity, Switching speed, subthreshold swing and with different gate oxide thicknesses (t_ox) and nanowire diameters. Also, our results show the output conductance, transconductance, voltage gain and average electron velocity at the top of the barrier get improved in NWFETs with thinner t_ox and larger nanowire diameter.