Electrical Characteristics of Si/ZnO Core–Shell Nanowire Heterojunction Diode
In this paper, we have presented the electrical characteristics of the silicon nanowire (SiNW)/Zinc oxide (ZnO) core–shell heterojunction diode. In this work ZnO thin film was conformally deposited by atomic layer deposition (ALD) method on vertically aligned SiNW arrays, fabricated by electroless metal deposition and etching method with the help of ultrasonication. The current–voltage and capacitance–voltage characteristics were measured to show the electronic properties of the device. The current–voltage characteristics show the nonlinear rectifying nature of the SiNW/ZnO core–shell heterojunction diode with ideality factor and barrier height of 3.2 and 0.68 eV respectively. The barrier height measured from C–V characteristics is 0.97 V. The difference between barrier heights calculated from both I–V and C–V characteristics show that barrier inhomogeneities can be present between the interface of Si and ZnO. However, the satisfactory performance of junction characteristics ideality factor and turn-on voltage of the Si/ZnO core–shell heterojunction diodes indicates their potential applications in optoelectronics and photonics.
KeywordsALD Silicon nanowire Zinc oxide Core–shell heterostructure Barrier height
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The authors are cordially thankful to Dr. Pankaj Mishra and his group in Laser Materials Processing Division and DAE-RRCAT, Indore for availing some facilities to complete a part of the above project.
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