GaN HEMT Based S-Band Power Amplifier
In this paper, Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based S-band power amplifier design, simulation, fabrication, assembly and RF testing have been discussed. This power amplifier is capable of giving an output power ~8 watts in 3.3–3.5 GHz frequency range with a PAE greater than 90 %.
KeywordsGallium Nitride High electron mobility transistor Plated through hole EM networks
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