GaN HEMT Based S-Band Power Amplifier

  • Archana Ahirwar
  • Poonam Singh
  • S. K. Tomar
  • Meena Mishra
  • Ashok Kumar
  • B. K. Sehgal
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

In this paper, Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based S-band power amplifier design, simulation, fabrication, assembly and RF testing have been discussed. This power amplifier is capable of giving an output power ~8 watts in 3.3–3.5 GHz frequency range with a PAE greater than 90 %.

Keywords

Gallium Nitride High electron mobility transistor Plated through hole EM networks 

REFERENCES

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    Steve C. Cripps, “RF Power Amplifiers for Wireless Communications”, 2nd edition, Norwood, MA: Artech House, 2006.Google Scholar
  2. 2.
    Cree, “CGH40010”, Rev3.1, 2006-2011[online] www.cree.com/wireless
  3. 3.
    Boshnakov, “First-timeright design of RF/microwave Class A power amplifiers using only S-parameters”, 2004.Google Scholar
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    B. Arntz, “Analyzing abrupt microstrip transitions”, RF Design Magazine, March 2002.Google Scholar
  5. 5.
    Micheal Boers, Anthony Parker and Neil Weste, “A GaN HEMT Amplifier with 6-W Output Power and > 85% Power Added Efficiency”, IEEE Microwave Magazine, April 2008Google Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Archana Ahirwar
    • 1
  • Poonam Singh
    • 1
  • S. K. Tomar
    • 1
  • Meena Mishra
    • 1
  • Ashok Kumar
    • 1
  • B. K. Sehgal
    • 1
  1. 1.Solid State Physics LaboratoryDRDO, Ministry of DefenceDelhiIndia

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