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Investigations on: How the Band Lineups, Band Offsets and Photoluminescences of an InxGa1−xN/GaN Quantum Well change with Biaxial Strain

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

Abstract

Due to the large controversy regarding the material parameters of InGaN material systems, the band line up of InxGa1−xN/GaN heterostructures still remains controversial. In this paper we calculate the band positions for strained and unstrained InxGa1-xN/GaN interfaces considering the band gap of InN 0.7 eV, recently settled after long debate. Large changes of conduction band offsets and valance band offsets are pointed out when the previously reported band gap of InN, 1.9 eV is substituted by 0.7 eV.

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Authors and Affiliations

  1. Institute of Radiophysics and Electronics, University of Calcutta, Kolkata, India

    Partha Pratim Bera, Siddhartha Panda & Dipankar Biswas

Authors
  1. Partha Pratim Bera
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  2. Siddhartha Panda
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  3. Dipankar Biswas
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Corresponding author

Correspondence to Partha Pratim Bera .

Editor information

Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Bera, P.P., Panda, S., Biswas, D. (2014). Investigations on: How the Band Lineups, Band Offsets and Photoluminescences of an InxGa1−xN/GaN Quantum Well change with Biaxial Strain. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_169

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