Growth and Characterization of MOCVD grown InP Quantum Dots on Si for Monolithic Integration

  • Nripendra N. Halder
  • Souvik Kundu
  • Rabibrata Mukherjee
  • D. Biswas
  • P. Banerji
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Integration of III-V based optoelectronics with Si microelectronics is one of the basic needs for next generation low cost monolithically integrated circuits. InP quantum dots (QDs) has been grown on Si substrate as a step for the integration of III-V based optoelectronics on Si. In this paper the growth details and the properties of the dots has been discussed. The luminescence property of the QDs has been analyzed with the help of the band alignment of the nano heterojunction. The carrier confinement mechanism has been discussed as well.

Keywords

Quantum Dots Monolithic Integration MOCVD Growth Rate Photoluminescence 

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Notes

Acknowledgments

One of the authors (N. N. Halder) thankfully acknowledges the financial support received from DST, INDIA (Sanction No. 100/IFD/196/2010-11, dated: 03/06/10). Growths of the samples were carried out with technical help Mr. P Chakraborty, thus the authors acknowledge his support. We also acknowledge Dr. T. Shripathi (UGC-DAE CSR,Indore) for XPS measurements and Dr. T. D. Das for PL measurements.

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Nripendra N. Halder
    • 1
  • Souvik Kundu
    • 2
  • Rabibrata Mukherjee
    • 3
  • D. Biswas
    • 4
  • P. Banerji
    • 5
  1. 1.Advanced Technology Development CentreIndian Institute of TechnologyKharagpurIndia
  2. 2.School of Electrical Engineering and Computer ScienceOregon State UniversityCorvallisUSA
  3. 3.Department of Chemical EngineeringIndian Institute of TechnologyKharagpurIndia
  4. 4.Department of Electronics and Electrical Communication EngineeringIndian Institute of TechnologyKharagpurIndia
  5. 5.Materials Science CentreIndian Institute of TechnologyKharagpurIndia

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