Abstract
Integration of III-V based optoelectronics with Si microelectronics is one of the basic needs for next generation low cost monolithically integrated circuits. InP quantum dots (QDs) has been grown on Si substrate as a step for the integration of III-V based optoelectronics on Si. In this paper the growth details and the properties of the dots has been discussed. The luminescence property of the QDs has been analyzed with the help of the band alignment of the nano heterojunction. The carrier confinement mechanism has been discussed as well.
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Acknowledgments
One of the authors (N. N. Halder) thankfully acknowledges the financial support received from DST, INDIA (Sanction No. 100/IFD/196/2010-11, dated: 03/06/10). Growths of the samples were carried out with technical help Mr. P Chakraborty, thus the authors acknowledge his support. We also acknowledge Dr. T. Shripathi (UGC-DAE CSR,Indore) for XPS measurements and Dr. T. D. Das for PL measurements.
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Halder, N.N., Kundu, S., Mukherjee, R., Biswas, D., Banerji, P. (2014). Growth and Characterization of MOCVD grown InP Quantum Dots on Si for Monolithic Integration. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_165
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DOI: https://doi.org/10.1007/978-3-319-03002-9_165
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03001-2
Online ISBN: 978-3-319-03002-9
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