Effect of Growth Temperature on the Diameter Distribution and Yield of Carbon Nanotubes
Growth of carbon nanotubes (CNTs) on iron sputtered Si substrate has been done by using self design Thermal Chemical Vapor Deposition (TCVD) at atmospheric pressure. Parameters of CNTs are highly dependent on the growth temperature. A strong relation between CNT’s diameter, yield and growth temperature was found. The experiments were done in the temperature range of 750–900 °C with an interval of 25 °C. It was found that at 750 °C there was no growth of CNT. However, at 775 °C, the horizontal network of CNTs having diameter range of 8–12 nm with sufficient yield was observed. As we increase the temperature, an increase in CNT’s diameter and decrease in yield was found. These results demonstrate that diameter and yields of CNTs can be controlled with the growth temperature.