Impact of Scaling Gate Oxide Thickness on the Performance of Silicon Based Triple Gate Rectangular Nwfet
Previously, simulations were carried out on the classical drift diffusion technique which no longer supports the present day criteria in a 3D domain. Now-a-days, we enhance our simulation capabilities by performing simulation at an atomistic level rather than bulk which gives us best result in a 3D domain. To fulfill this requirement, the first full-band quantum and atomistic transport simulator OMEN is designed for post CMOS devices. In this paper, we have investigated the effect of scaling gate oxide thickness of rectangular Si-NWFET on its device performance in terms of transfer characteristics, output characteristics, electron doping, drive current (Ion), leakage current (Ioff), switching speed (Ion/Ioff) and transconductance. We concluded that the conductivity of Si-NWFET and doping density of electrons in Si-NWFET enhances with the reduction in oxide thickness. Also, we have concluded that with the reduction in oxide thickness, drive current of the device increases and leakage current of the device decreases which is an improvement over CNTs and conventional MOSFETs. Further, the switching speed (Ion/Ioff) of the device and transconductance (gm) enhances by reducing the oxide thickness.
KeywordsRectangular Si-NWFET OMEN Tox Ion Ioff gm
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