Raman Characteristics of Vertically Aligned Single Wall Carbon Nanotubes Grown by Plasma Enhanced Chemical Vapor Deposition System

Abstract

Vertically aligned single wall carbon nanotubes (VA-SWCNTs) of diameter 0.8–1.5 nm suitable for semiconducting applications have been successfully grown on Iron catalyst film using Plasma Enhanced Chemical Vapor Deposition (PECVD) System. The Raman signal positions of the spectra in RBM, D and G bands confirm the existence of SWCNTs. The grown sample is excited with laser excitation wavelengths, 633 nm from He–Ne laser. The field emission study has been carried out in a vacuum chamber under a pressure of 10⁻⁶ torr. Highly sensitive, capital intensive equipment such as Field Emission Scanning Electron Microscope (FESEM), has been used to identify the state and morphology of nanotube samples.