Advertisement

Stress Induced Degradation in Sputtered ZrO2 Thin Films on Silicon for Nano-MOSFET’s

  • Ashwath Rao
  • Joyline Dsa
  • Saurabh Goyal
  • B. R. Singh
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

This paper deals with stress induced degradation in reactively sputtered ZrO2/Si interface deposited in N2 containing plasma and pure argon ambient. MOS C–V and I–V techniques were used for interface characterization. Leakage current and shift in flat band voltages were compared for ZrO2 films deposited with and without N2 containing plasma. The presence of nitrogen in the ZrO2 films RF sputtered in nitrogen containing plasma was verified by glancing angle X-ray diffraction (XRD). The effect of post deposition annealing and current stress carried out on the samples deposited in different ambient was investigated. Electrical and reliability characteristics of annealed devices were found to be better than non annealed samples. The flat band voltage shifts towards negative value on being stressed, indicating positive charge trapping in the high k dielectric layer. The samples grown in pure argon ambient showed enhanced leakage as compared with samples grown in nitrogen ambient on application of stress.

Keywords

High-K Reactive sputtering Zirconium dioxide 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Notes

Acknowledgments

The authors would like to express their sincere thanks to Dr. M.D. Tiwari, Director and Prof. M. Radhakrishna for their constant support and encouragement.

References

  1. 1.
    E.H. Nicollian, J.R. Brews, “MOS Physics and Technology”, 2nd Edition, Hoboken, N.J., Wiley-Interscience, 2002.Google Scholar
  2. 2.
    C.H. Liu, F.C. Chiu, IEEE Electron Dev. Lett. 28 (2007) 62.Google Scholar
  3. 3.
    Fu-chien Chiu,Zhi-Hong Lin,Che-Wei Change et.al “Electron Conduction mechanism and band diagram ofsputtered-deposited Al/ZrO2/Si structure” J.Appl.phys.97,034506(20005)Google Scholar
  4. 4.
    F.A. Cotton, G. Wilkinson, C.A. Murillo, M. Bochmann, Advanced Inorganic Chemistry, Wiley, New York, 2000.Google Scholar
  5. 5.
    J.Robertson “high K dielectric constants” eur.Phys.J.Appl.Phys.28,265-291(2004)Google Scholar
  6. 6.
    G.Wilk,R.M.Wallace,J.M.Anthony,J.Appl.Phys.89,5243(2001).Google Scholar
  7. 7.
    P.Chen et al. “Effect of nitrogen containing plasmas on interface stability of hafnium oxide ultrathin films on Si(100)”, Appl. Phys. Lett. 85, pp-1574, 2004Google Scholar
  8. 8.
    Chihoon Lee et al. “Nitrogen incorporation engineering and electrical properties of high- k gate dielectric HfO2and Al2O3 films on Si … substrate”, J. Vac. Sci. Technol. B 22,pp- 1838 2004.Google Scholar
  9. 9.
    Kang,C.S et al.” Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics, vol.81,pp.25392541,Appl.Phys.Lett.,2002.CrossRefGoogle Scholar
  10. 10.
    G.He et al. “Spectroscopic ellipsometry characterization of nitrogen-incorporated HfO2 gate dielectrics grown by radio-frequency reactive sputtering”,Google Scholar
  11. 11.
    Tein-chun yang and Krishna C.Saraswath” Effect of physical stress on the degradation og thin SiO2 films under electrical stress”,IEEEtranscation on electron devices,Vol,47,No.4,(2000)Google Scholar
  12. 12.
    DavidJ.Dumin,JayR.Maddux”Correlation of stress induced leakage current in thin oxides with trap generation inside the oxide” IEEE transcation on electron devices,Vol,40,No.5,(1993)Google Scholar
  13. 13.
    Mikihiro Kimura and TadahiroOhmi” Conduction mechanism and origim of stress-induced eakage current in thin silicon dioxide films” J.appl.phys.80(11)(1996)Google Scholar
  14. 14.
    PushkarP.Apte,KrishnaC.Saraswat “Correlation of trap generation to charge to breakdown:a physical-damage Model for dilectric breakdown” IEEE transcation on electron devices,Vol,41,No.9,(1994)Google Scholar
  15. 15.
    M.HChoudary,M.A.Manan et.al” High-K dielectrics for submicron MOSFET” IJETSE,VOL,No,2,July 2010.Google Scholar
  16. 16.
    L.M Chen et.al “Influence of pre-deposition treatments on the interfacial and electrical characteristics of ZrO2 gate dielectrics”, Thin Solid Films,Vol.515, pp 3724–3729, 2007.CrossRefGoogle Scholar
  17. 17.
    A. W. Strong, E. Y. Wu, Rolf-Peter Vollertsen, J. Sune, G. La Rosa, T. D. Sullivan and S. E. Rauch,Reliability Wearout Mechanisms in Advanced CMOS Technologies, IEEE Press Series on Microelectronic Systems, 2009, chapter 2.Google Scholar
  18. 18.
    H.Iwai et al “Tech.Digest.Int. Electron Devices Meeting,IEEE, 2002.Google Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Ashwath Rao
    • 1
  • Joyline Dsa
    • 1
  • Saurabh Goyal
    • 1
  • B. R. Singh
    • 1
  1. 1.Indian Institute of Information TechnologyAllahabadIndia

Personalised recommendations