Abstract
Phosphorous doped hydrogenated silicon thin film has been deposited by filtered cathodic vacuum arc technique at different substrate temperatures at a fixed hydrogen gas pressure. X-ray diffraction, electrical conductivity and optical band gap and scanning electron microscopy have been used to characterize the properties of films.
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Acknowledgments
The authors are grateful to Prof. R. C. Budhani, Director, CSIR-National Physical Laboratory, New Delhi (India) for his kind permission to publish this paper. They wish to thank to Dr. Sushil Kumar, Mr. C. M. S. Rauthan and Mr. Atul Bisht for useful discussion. Mr. Ajay Kumar Kesarwani is grateful to the Council of Scientific and Industrial Research (CSIR), Government of India and Mr. R. K. Tripathi is grateful to the Ministry of New and Renewable Energy (MNRE), Government of India for providing financial assistant during the course of this work.
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Kesarwani, A., Panwar, O.S., Tripathi, R.K., Chockalingam, S. (2014). Synthesis and Characterization of Phosphorus Doped Hydrogenated Silicon Films by Filtered Cathodic Vacuum Arc Technique. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_137
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DOI: https://doi.org/10.1007/978-3-319-03002-9_137
Publisher Name: Springer, Cham
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