Catalytic Growth of 3C-SiC Nanorods: Structural and Optical Characterization

  • Afzal Khan
  • Chacko Jacob
Part of the Environmental Science and Engineering book series (ESE)


Cubic (3C)-silicon carbide (SiC) nanorods were grown in an inductively heated horizontal cold wall quartz tube reactor by atmospheric pressure chemical vapor deposition (APCVD). A single source precursor, hexamethyldisilane (HMDS) was used for both silicon and carbon and hydrogen (H2) as a carrier gas. A 10 nm thin film of nickel was used as a catalyst. As-grown nanorods were characterized by x-ray diffraction (XRD), Raman spectroscopy and field emission scanning electron microscopy (FESEM) to confirm the crystalline nature and the surface morphology of these nanorods. The room temperature photoluminescence (RTPL) spectrum showed the violet-blue emission from these nanorods.


3C-SiC APCVD and single source precursor 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    G.L. Harris, Properties of Silicon Carbide, (INSPEC, the Institution of Electrical Engineers, London, 1995).Google Scholar
  2. 2.
    S. Nishino, J. A. Powell, H. A. Will, Appl. Phys. Lett., 42, 460 (1983).CrossRefGoogle Scholar
  3. 3.
    I. Golecki, F. Reidinger, J. Marti, Appl. Phys. Lett., 60, 1703 (1992).CrossRefGoogle Scholar
  4. 4.
    Y.Ohshita, J. Electrochem. Soc., 142, 1002 (1995).CrossRefGoogle Scholar
  5. 5.
    C.C. Chiu, S.B. Desu, G. Chen, C.Y. Tsai, W.T. Reynolds, J.Mat. Res., 5, 1099 (1995).Google Scholar
  6. 6.
    J. Rodrigues-Viejo, J. Stemenos, N. Clavaguera, M.T. Clavaguera-Mora, J. Cryst. Growth, 155, 215 (1995).Google Scholar
  7. 7.
    N. Nordell, S. Nishino, J.W. Yang, C. Jacob, P. Pirouz, J. Electrochem Soc., 142, 565 (1995).Google Scholar
  8. 8.
    K. Takahashi, S. Nishino, J. Saraie, J. Electrochem. Soc., 139, 3565 (1992).CrossRefGoogle Scholar
  9. 9.
    C.H. Wu, C. Jacob, X.J. Ning, S. Nishino, P. Pirouz, J. Cryst. Growth, 158,480(1996).Google Scholar
  10. 10.
    Z. Pan, H. L. Lai, F.C.K. Au, X. Duan, W. Zhou, W. Shi, N. Wang, C. S. Lee, N. B. Wong, S. T. Lee, S. Xie, Adv. Mater., 12, 1186 (2000).CrossRefGoogle Scholar
  11. 11.
    L. Zhang, W. Yang, H. Jin, Z. Zheng, Z. Xie, H. Miao, L. An, Appl. Phys. Lett. 89, 143101 (2006).CrossRefGoogle Scholar
  12. 12.
    G.D. Wei, W.P. Qin, R. Kim, J.B. Sun, P.F. Zhu, G.F. Wang, L.L. Wang, D.S. Zhang, K.Z. Zheng, Chem. Phys. Lett., 461, 242 (2008).Google Scholar
  13. 13.
    Y.F. Zhang, M. Nishitani-Gamo, C. Xiao, T. Ando, J. Appl. Phys., 91, 6066 (2002).Google Scholar
  14. 14.
    R.B. Wu, Y. Pan, G.Y. Yang, M.X. Gao, L.L. Wu, J.J. Chen, R. Zhai, J. Lin, J. Phys. Chem. C, 111, 6233 (2007).CrossRefGoogle Scholar
  15. 15.
    S.K. Panda, J. Sengupta, C. Jacob, J. Nanosci. Nanotechnol. 10, 3046 (2010).Google Scholar
  16. 16.
    L. Zhang, W. Yang, H. Jin and Z. Zheng, Z. Xie and H. Miao and L. An, Appl. Phys.Lett., 89, 143101 (2006).Google Scholar
  17. 17.
    D. Olego, M. Cardona, Phys. Rev. B, 25, 3889 (1982).CrossRefGoogle Scholar
  18. 18.
    Z. C. Feng, A. J. Mascarenhas, W. J. Choyke, J. A. Powell, J. Appl. Phys., 64, 3176 (1998).Google Scholar
  19. 19.
    W. Shi, Y. Zheng, H. Peng, N. Wang, C. S. Lee, and S. T. Lee, J. Am. Ceram. Soc., 83, 3228 (2000).Google Scholar
  20. 20.
    Z. Li, W. Gao, A. Meng, Z. Geng, and Li Gao, J. Phys. Chem. C, 113, 91 (2009).Google Scholar
  21. 21.
    R.B. Wu, Y. Pan, G.Y. Yang, M.X. Gao, L.L. Wu, J.J. Chen, R. Zhai, J. Lin, J. Phys. Chem. C, 111, 6233 (2007).CrossRefGoogle Scholar
  22. 22.
    Z. Li, W. Gao, A. Meng, Z. Geng, and Li Gao, J. Phys. Chem. C, 113, 91 (2009).Google Scholar
  23. 23.
    G. C. Xi, Y. Y. Peng, S. M. Wang, T. W. Li, W. C. Yu, Y. T. Qian, J. Phys. Chem. B, 108, 20102 (2004).CrossRefGoogle Scholar
  24. 24.
    A. Kassiba, M. Makowska-Janusik, J. Boucle, J. F. Bardeau, A. Bulou, and N. Herlin-Boime, Phys. Rev. B, 66, 155317 (2002).Google Scholar
  25. 25.
    J. J. Niu, J. N. Wang, J. Phys. Chem. B, 111, 4368 (2007).CrossRefGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Indian Institute of TechnologyKharagpurIndia

Personalised recommendations