Stress Engineering Using Si3N4 for Stiction Free Release of SOI Beams

  • Suman A. Gupta
  • Apoorva Shenoy
  • Monisha
  • V. Uma
  • M. N. Vijayaraghavan
  • Navakanta Bhat
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

We report on the effect of thin silicon nitride (Si3N4) induced tensile stress on the structural release of 200 nm thick SOI beam, in the surface micro-machining process. A thin (20 nm/100 nm) LPCVD grown Si3N4 is shown to significantly enhance the yield of released beam in wet release technique. This is especially prominent with increase in beam length, where the beams have higher tendency for stiction. We attribute this yield enhancement to the nitride induced tensile stress, as verified by buckling tendency and resonance frequency data obtained from optical profilometry and laser doppler vibrometry.

Keywords

Fixed–fixed beam Buckling distance Yield Tensile stress SOI 

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Notes

Acknowledgments

We thank MCIT for funding support. We would like to thank the Fabrication facility, Staff and Characterization facility and Staff at CeNSE, IISc. We would like to thank Sreekanth for helping us with vibrometer experiments.

References

  1. 1.
    “Influence of liquid surface tension on stiction of SOI MEMS”, O Raccurt, F Tardif, F Arnaud d’Avitaya and T Vareine, Journal of Micromechanics and Microengineering,vol 14, no. 7, 0.1083, 2012Google Scholar
  2. 2.
    “Side by side comparison of passive MEMS Strain Test Structures under Residual Compression”, Nathan D Masters, Maarten P DE Boer, Brain D Jensen, Michael S Baker, and David KoesterGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Suman A. Gupta
    • 1
  • Apoorva Shenoy
    • 2
  • Monisha
    • 2
  • V. Uma
    • 2
  • M. N. Vijayaraghavan
    • 1
  • Navakanta Bhat
    • 1
    • 3
  1. 1.Centre for Nano Science and EngineeringIIScBangaloreIndia
  2. 2.Mount Carmel CollegeBangaloreIndia
  3. 3.Electrical Communication EngineeringIIScBangaloreIndia

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