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Thick PECVD Germanium Films for MEMS Application

  • B. Rashmi Rao
  • Navakanta Bhat
  • S. K. Sikdar
Conference paper
Part of the Environmental Science and Engineering book series (ESE)

Abstract

Plasma enhanced chemical vapour deposition (PECVD) of thick germanium (Ge) films (~1 m) on silicon di-oxide (SiO2) at low temperatures is described. A diborane pre-treatment on SiO2 films is done to seed the Ge growth, followed by the deposition of thick Ge films using germane (GeH4) and argon (Ar). Further, the effect of hydrogen (H2) dilution on the deposition rate is also investigated. The film thickness and morphology is characterized using SEM. Use of high RF power and substrate temperature show increased deposition rate. EDS analysis indicates that these films contain 97–98 atomic percentage of Ge. A recipe for anisotropic dry etching of the deposited Ge films with 10 nm/min etch rate is also suggested.

Keywords

PECVD Boron pre-treatment SEM EDS 

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Notes

Acknowledgments

This work was carried out at NNfC, CeNSE, IISc, Bangalore, funded by MCIT and DST, Govt. of India.

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • B. Rashmi Rao
    • 1
  • Navakanta Bhat
    • 1
    • 2
  • S. K. Sikdar
    • 1
    • 2
    • 3
  1. 1.Center for Nano Science and EngineeringIndian Institute of ScienceBangaloreIndia
  2. 2.Department of Electrical Communication EngineeringIndian Institute of ScienceBangaloreIndia
  3. 3.Molecular Biophysics UnitIndian Institute of ScienceBangaloreIndia

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