Abstract
Film Bulk Acoustic Resonator (FBAR) technology is one of the enabling technologies which fulfill the two major needs of wireless industry i.e. high operating frequency range and miniaturization of RF components. This paper presents the design and simulation of a FBAR with zinc oxide as the piezoelectric layer. In the present work, FBAR has been designed and simulated for piezoelectric thickness of 0.75 and 1.25 μm. A thickness of 0.75 μm corresponds to a simulated frequency of 3.57 GHz and can be used for WiMAX applications whereas a 1.25 μm thick layer is suitable for GSM applications at 1.94 GHz. The suitability of the structure for RF filter applications has been observed in terms of electromechanical coupling coefficient.
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Dutta, J., Singh, A.V., Singhal, S., Upadhayay, M.D. (2014). Study on Design and Simulation of Zinc Oxide Based Film Bulk Acoustic Resonator for RF Filters. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_110
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DOI: https://doi.org/10.1007/978-3-319-03002-9_110
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03001-2
Online ISBN: 978-3-319-03002-9
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