PECVD Grown SiC Cantilevers with Dry and Wet Release
Cantilevers made out of PECVD grown SiC films are reported here. The cantilevers were realized in two different methods—isotropic etch (Dry release) and combination of wet etch and critical point dry release. The dry release process for Silicon isotropic etch results in excellent etch selectivity against SiC, to provide released structures. The optimized wet release process is able to overcome stiction issues to provide excellent SiC cantilevers.
KeywordsSiC PECVD Cantilevers
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We acknowledge MCIT for funding support.The authors would like to thank Varadharaja Perumal, Sreekantha and Anita Shiva for their extensive help with SEM, Vibrometer and Lithography.
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