Abstract
In this chapter we explore the possibilities offered by focused ion beam milling to fabricate epitaxial islands out of bismuth ferrite thin films. Three processes are described: first one consisting of high-energy direct milling of a film followed by annealing procedures, a second one of high-energy milling of a film coated with a sacrificial layer which is removed successively, and a third one of low-energy milling of a film previously structured with sacrificial layer islands. Ferroelectric properties of the obtained structures have been investigated at a nanoscale level by piezoresponse force microscopy, in order to evaluate the impact of fabrication-induced damages on the functional properties. Structures produced by direct milling display ferroelectricity only after a post-fabrication annealing procedure, exhibiting polarization pinning only for structures with lateral sizes <500 nm. Detailed investigations have revealed occurrence of pinning and/or high imprint in an area within 100 nm distance from the structure edges, independently of the structure size. On the contrary, 250 nm large islands produced by milling through a sacrificial layer and over the structured sacrificial layer display ferroelectricity, without diminution of functional properties. Hence we conclude that focused ion beam milling is a viable technique for fabrication of ferroelectric structures, in particular bismuth ferrite nanoislands.
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Acknowledgments
We thank Norbert Schammelt for the FIB fabrication of the BFO structures, Florian Johann for the growth of the BFO films and fruitful assistance, and German Science Foundation for financial support in the framework of SFB762.
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Morelli, A., Vrejoiu, I. (2013). Epitaxial Ferroelectric Nanostructures Fabricated by FIB Milling. In: Wang, Z. (eds) FIB Nanostructures. Lecture Notes in Nanoscale Science and Technology, vol 20. Springer, Cham. https://doi.org/10.1007/978-3-319-02874-3_2
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