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MoS2 pp 217–236Cite as

Optical Characterization, Low-Temperature Photoluminescence, and Photocarrier Dynamics in MoS2

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Part of the book series: Lecture Notes in Nanoscale Science and Technology ((LNNST,volume 21))

Abstract

In recent years, the dichalcogenide MoS2 has gained attention as an interesting material system for basic research and possible optoelectronic applications. Here, we report on optical spectroscopy of few- and single-layer MoS2 flakes. We use Raman spectroscopy to characterize our samples. The energy of the characteristic phonon modes in MoS2 depends on the number of layers, so that the thickness of individual flakes can be mapped in scanning Raman experiments. While bulk MoS2 is an indirect-gap semiconductor, single-layer MoS2 has a direct band gap and emits strong photoluminescence. We investigate the photoluminescence in single-layer MoS2 for different experimental conditions. Additionally, we study the photocarrier dynamics in time-resolved photoluminescence experiments.

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Acknowledgments

The authors gratefully acknowledge financial support by the DFG via SFB689, SPP 1285, GRK 1570, and KO3612/1-1 as well as fruitful discussion with L. Wirtz, A. Molina-Sánchez, J. Maultsch, and N. Scheuschner.

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Authors and Affiliations

  1. Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Regensburg, 93040, Germany

    T. Korn, G. Plechinger, S. Heydrich, F.-X. Schrettenbrunner, J. Eroms, D. Weiss & C. Schüller

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  1. T. Korn
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  2. G. Plechinger
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  1. State Key Laboratory of Electronic, University of Electronic Science and Technology, Chengdu, People's Republic of China

    Zhiming M. Wang

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Korn, T. et al. (2014). Optical Characterization, Low-Temperature Photoluminescence, and Photocarrier Dynamics in MoS2 . In: Wang, Z. (eds) MoS2. Lecture Notes in Nanoscale Science and Technology, vol 21. Springer, Cham. https://doi.org/10.1007/978-3-319-02850-7_8

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