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Tunable Electronic and Dielectric Properties of Molybdenum Disulfide

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MoS2

Part of the book series: Lecture Notes in Nanoscale Science and Technology ((LNNST,volume 21))

Abstract

We report tunability in electronic and dielectric properties of a technologically promising nanomaterial MoS2. The properties of MoS2 can be tuned by varying the layer thickness, by applying mechanic strain, by tuning the interlayer distance, and by applying external electric field. Reducing the slab thickness systematically from bulk to monolayers causes blue shift in the band gap energies, thereby, resulting in tunability of the electronic band gap. By reducing the number of layers from bulk to monolayer limit, electron energy loss spectra (EELS) shows red shift in the energies of both \( {{\uppi}} \) and \( {{\uppi}} + {{\upsigma}} \) plasmons. Mechanical strains reduce the band gap of monolayer MoS2 by causing a direct-to-indirect band gap transitions and finally rendering it into metal at critical values depending on the types of applied strain. Dielectric properties of monolayer MoS2 too get influenced by the type of applied strain. Imaginary part of dielectric function (\( {{\upvarepsilon}}_{2} \)) shows redshift in the structure peak energy on the application of strains with significant dependence on the types of applied strain. In-plane strains also cause semiconductor-metal transitions (\( {\text{e}}_{T} \)) in bilayer sheets of MoS2. The energy gap of semiconducting bilayer MoS2 gets reduced continuously by reducing the bilayer separation, eventually rendering it metallic at critical value of interlayer distance. Electrically gated semiconducting bilayer MoS2 is also found to show reduction in the band gap on increasing the magnitude of electric field and results in band gap closure at a critical value of the field.

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Acknowledgments

Ashok Kumar is grateful to Council of Scientific and Industrial Research (CSIR), New Delhi, Government of India, for providing financial assistance in the form of Senior Research Fellowship.

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  1. Physics Department, Himachal Pradesh University, Shimla, 171005, India

    Ashok Kumar & P. K. Ahluwalia

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  1. Ashok Kumar
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  1. State Key Laboratory of Electronic, University of Electronic Science and Technology, Chengdu, People's Republic of China

    Zhiming M. Wang

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Kumar, A., Ahluwalia, P.K. (2014). Tunable Electronic and Dielectric Properties of Molybdenum Disulfide. In: Wang, Z. (eds) MoS2. Lecture Notes in Nanoscale Science and Technology, vol 21. Springer, Cham. https://doi.org/10.1007/978-3-319-02850-7_3

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