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Toward Quantum FinFET pp 25–53Cite as

Model for Quantum Confinement in Nanowires and the Application of This Model to the Study of Carrier Mobility in Nanowire FinFETs

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Part of the book series: Lecture Notes in Nanoscale Science and Technology ((LNNST,volume 17))

Abstract

FinFETs represent exciting new technology. Nanowire FinFETs are more promising than the bulk-silicon FinFETs. As they have the gate capacitance in closer proximity to the whole of the channel, they control the short-channel effects very well and also suppress the leakage current. Key to the superior performance of these devices is high carrier mobility. The focus of this chapter is the fundamental of this mobility in the framework of the SNM (simple, novel, malleable) model for quantum-confined nanowires. Extensive investigation has been carried out to address the role of quantum confinement and dielectric confinement on mobility enhancement in nanowire FinFETs. Impacts of ionized impurity scattering, acoustic phonon scattering, and dislocation scattering on the carrier mobility have been examined. Calculated results have been compared with available experiments. These results have also been used to suggest possible modifications in the design of nanowire FinFETs.

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Authors and Affiliations

  1. Department of Physics, Neotia Institute of Technology, Management, and Science, Diamond Harbour Road, Amira, 743 368, 24-Paraganas (South), West Bengal, India

    Arif Khan

  2. Electrocom Corporation, 60317, MD, 20859-0317, Potomac, USA

    Arif Khan & Saeed Ganji

  3. Sciencotech, 780 Girard Street Northwest, Washington, DC, 20001, USA

    S. Noor Mohammad

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  1. Arif Khan
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  2. Saeed Ganji
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Correspondence to S. Noor Mohammad .

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  1. Engineering Research Center for Semiconductor Integrated Technology, Chinese Academy of Sciences, Beijing, People's Republic of China

    Weihua Han

  2. Engineering Research Center for Semiconductor Integrated Technology, Chinese Academy of Sciences, Beijing, People's Republic of China

    Zhiming M. Wang

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Khan, A., Ganji, S., Mohammad, S.N. (2013). Model for Quantum Confinement in Nanowires and the Application of This Model to the Study of Carrier Mobility in Nanowire FinFETs. In: Han, W., Wang, Z. (eds) Toward Quantum FinFET. Lecture Notes in Nanoscale Science and Technology, vol 17. Springer, Cham. https://doi.org/10.1007/978-3-319-02021-1_2

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