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Enhanced Quantum Effects in Room-Temperature Coulomb Blockade Devices Based on Ultrascaled finFET Structure

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Toward Quantum FinFET

Part of the book series: Lecture Notes in Nanoscale Science and Technology ((LNNST,volume 17))

Abstract

The availability of an ultrasmall dot-based single-electron device could provide new operating regimes where Coulomb blockade and quantum confinement are two distinct effects, competing to control electron transport. Most recently, we have made a successful implementation of CMOS-compatible room-temperature single-electron transistor by ultrascaling a finFET structure down to an ultimate limiting form, resulting in the reliable formation of a sub-5-nm silicon Coulomb island. The charge stability of the device features, for the first time, three and a half clear multiple Coulomb diamonds at 300 K, showing high PVCRs. The device dot size is sufficiently small that Coulomb blockade and other quantum effects persist up to room temperature. The charge stability at 300 K with additional fine structures of low-temperature Coulomb peaks are successfully modeled by including the interplay between Coulomb interaction, valley splitting, and strong quantum confinement that become enhanced in ultrasmall scale. This supports that for a sub-5 nm device even small number of electron occupation ensures that quantum many-body interactions strongly influence the room-temperature electron transport characteristics. Under this condition, quantum effect can be used as an additional state variable to provide another multi-switching functionality.

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Acknowledgments

This work was supported by the National Research Foundation through the Frontier 21 National Program for Tera-level NanoDevices, Global Partnership Research Program with University of Cambridge, and in part by a research grant of the Chungbuk National University in 2011.

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Authors and Affiliations

  1. Department of Physics & Research Institute for Nano Science & Technology, Chungbuk National University, Cheongju, 361-763, Korea

    Jung B. Choi

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  1. Jung B. Choi
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Correspondence to Jung B. Choi .

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Editors and Affiliations

  1. Engineering Research Center for Semiconductor Integrated Technology, Chinese Academy of Sciences, Beijing, People's Republic of China

    Weihua Han

  2. Engineering Research Center for Semiconductor Integrated Technology, Chinese Academy of Sciences, Beijing, People's Republic of China

    Zhiming M. Wang

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Choi, J.B. (2013). Enhanced Quantum Effects in Room-Temperature Coulomb Blockade Devices Based on Ultrascaled finFET Structure. In: Han, W., Wang, Z. (eds) Toward Quantum FinFET. Lecture Notes in Nanoscale Science and Technology, vol 17. Springer, Cham. https://doi.org/10.1007/978-3-319-02021-1_12

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