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Towards Drain Extended FinFETs for SoC Applications

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Toward Quantum FinFET

Part of the book series: Lecture Notes in Nanoscale Science and Technology ((LNNST,volume 17))

Abstract

This chapter highlights the importance of drain extended class of high voltage MOS devices for advanced implementations of System on Chip (SoC) applications using FinFET or other tri-gate technologies. The working principle of drain extended MOS device is explained and an understanding is built in order to bridge existing drain extended planar devices and future drain extended, FinFETs or tri-gate devices. In this connection, a recently proposed Drain extended FinFET device is discussed for high voltage as well as high speed applications. This shows a better RON vs. V BD trade-off when compared to a conventional device option. Finally, device design and optimization guidelines have been discussed for the new drain extended FinFET device.

Mayank Shrivastava was formerly with Intel Corp., Mobile and Communications Group, Munich, Germany.

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Author information

Authors and Affiliations

  1. Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore, Karnataka, India

    Mayank Shrivastava

  2. Intel Mobile Communication, Neubiberg, Germany

    Harald Gossner

  3. Electrical Engineering Department, IIT Bombay, Mumbai, Maharashtra, India

    V. Ramgopal Rao

Authors
  1. Mayank Shrivastava
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  2. Harald Gossner
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  3. V. Ramgopal Rao
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Corresponding author

Correspondence to Mayank Shrivastava .

Editor information

Editors and Affiliations

  1. Engineering Research Center for Semiconductor Integrated Technology, Chinese Academy of Sciences, Beijing, People's Republic of China

    Weihua Han

  2. Engineering Research Center for Semiconductor Integrated Technology, Chinese Academy of Sciences, Beijing, People's Republic of China

    Zhiming M. Wang

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© 2013 Springer International Publishing Switzerland

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Shrivastava, M., Gossner, H., Rao, V.R. (2013). Towards Drain Extended FinFETs for SoC Applications. In: Han, W., Wang, Z. (eds) Toward Quantum FinFET. Lecture Notes in Nanoscale Science and Technology, vol 17. Springer, Cham. https://doi.org/10.1007/978-3-319-02021-1_10

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