Abstract
Bi88Sb12 alloy has been doped with 0, 0.066, 0.66, 1.32, and 3.91 % Sm and prepared under two different fabrication conditions. The first being ball milled for 12 h and hot pressed at 240 °C and the second ball milled for 6 h and hot pressed at 200 °C. The results are in agreement with previously studied Ce and Ho samples prepared under similar conditions. A slight ZT enhancement is seen due to doping which is an effect of an enhanced Seebeck coefficient as a result of a decrease in the carrier concentration. The enhancement does not appear to be caused by the magnetic moments of Ce, Sm, and Ho based on the similar change to the gap size with the widely varying magnetic moments of the dopants. In addition, lattice thermal transport in these materials was investigated experimentally and theoretically where phonon dispersions were obtained from first principle calculations, and semiclassical models were used to calculate phonon lifetimes. We have not observed a strong thermal conductivity dependence on the type of the impurity.
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Acknowledgements
We gratefully acknowledge funding for this work through the “Solid State Solar-Thermal energy conversion Center (S3TEC),” an energy frontier research center founded by the US Department of Energy, Office of Basic Energy Science, under award number DE-SC0001299/DE-FG02-09ER46577.
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Opeil, C.P., Lukas, K.C. (2014). Cerium-, Samarium-, Holmium-Doped Bi88Sb12 . In: Wang, X., Wang, Z. (eds) Nanoscale Thermoelectrics. Lecture Notes in Nanoscale Science and Technology, vol 16. Springer, Cham. https://doi.org/10.1007/978-3-319-02012-9_8
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