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SiGe Nanowires for Thermoelectrics Applications

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Nanoscale Thermoelectrics

Part of the book series: Lecture Notes in Nanoscale Science and Technology ((LNNST,volume 16))

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Abstract

The possibility to reduce the thermal conductivity leaving essentially unaltered the electron transport makes semiconducting nanowires ideal materials for the engineering of high-efficiency thermoelectric devices. A simple and appealing route to achieve these goals is bringing together Si and Ge, giving rise to Si1−x Ge x alloy nanowires with tunable Ge concentration, core–shell structures and multiple axial junctions, i.e. superlattices. In this chapter we review the most recent progresses in this field.

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Acknowledgements

We acknowledge the funding of the Spanish Ministry of Science and Technology under contracts FIS2009-12721-C04-03, CSD2007-00041, and FIS2012-37549-C05-05. M.A. acknowledges the support from the European Union through the FP7 Marie Curie Intra-European Fellowship No. 326794 (EXPRESS project).

Author information

Authors and Affiliations

  1. Institut d’Electronique Fondamentale, UMR8622, CNRS, Universitè Paris-Sud, 91405, Orsay, France

    Michele Amato

  2. Dipartimento di Fisica, European Theoretical Spectroscopy Facility (ETSF), Università di Roma, “Tor Vergata”, Via della Ricerca Scientifica 1, 00133, Roma, Italy

    Maurizia Palummo

  3. “Centro S3”, CNR-Istituto di Nanoscienze, Via Campi 213/A, 41125, Modena, Italy

    Stefano Ossicini

  4. Dipartimento di Scienze e Metodi dell’Ingegneria, Centro Interdipartimentale En&Tech, Universitá di Modena e Reggio Emilia, Via Amendola 2 Pad. Morselli, I-42100, Reggio Emilia, Italy

    Stefano Ossicini

  5. Institut de Ciència de Materials de Barcelona (CSIC), Campus de Bellaterra, 08193, Bellaterra, Spain

    Riccardo Rurali

Authors
  1. Michele Amato
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  2. Maurizia Palummo
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  4. Riccardo Rurali
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Corresponding author

Correspondence to Michele Amato .

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Editors and Affiliations

  1. Engineering Research Center for Semiconductor Integrated Technology, Chinese Academy of Sciences, Beijing, People's Republic of China

    Xiaodong Wang

  2. Engineering Research Center for Semiconductor Integrated Technology, Chinese Academy of Sciences, Beijing, People's Republic of China

    Zhiming M. Wang

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Amato, M., Palummo, M., Ossicini, S., Rurali, R. (2014). SiGe Nanowires for Thermoelectrics Applications. In: Wang, X., Wang, Z. (eds) Nanoscale Thermoelectrics. Lecture Notes in Nanoscale Science and Technology, vol 16. Springer, Cham. https://doi.org/10.1007/978-3-319-02012-9_16

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  • DOI: https://doi.org/10.1007/978-3-319-02012-9_16

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-02011-2

  • Online ISBN: 978-3-319-02012-9

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