Skip to main content

Thermoelectric Properties of CoSb3 Based Skutterudites Filled by Group 13 Elements

  • Chapter
  • First Online:
Nanoscale Thermoelectrics

Part of the book series: Lecture Notes in Nanoscale Science and Technology ((LNNST,volume 16))

  • 2756 Accesses

Abstract

Thermoelectric (TE) generators can directly generate electrical power from waste heat, and thus could be an important part of the solution to future power supply and sustainable energy management. The main obstacle to the widespread use of TEs in diverse industries, e.g., for exhaust heat recovery in automobiles, is the low efficiency of materials in converting heat to electricity. The conversion efficiency of TE materials is quantified by the dimensionless figure of merit, ZT, and the way to enhance ZT is to decrease the lattice thermal conductivity (κ lat) of the material, while maintaining a high electrical conductivity, i.e., to create a situation in which phonons are scattered but electrons are unaffected. Various concepts have been used in the search for this situation, e.g., the use of rattling of atoms weakly bonded in crystals and nanostructuring of materials. Here we report TE properties of skutterudites filled by group 13 elements, i.e., Ga, In, and Tl. Our group has examined the high-temperature TE properties of various skutterudites filed by group 13 elements, viz., Ga-filled CoSb3, Tl-filled CoSb3, and In/Tl double-filled CoSb3. All systems exhibit relatively high TE figure of merit, especially, Tl0.1In x Co4Sb12 achieves a dramatic reduction of κ lat, resulting in the ZT = 1.20 at 700 K—very high for a bulk material. We have demonstrated that the reduction of κ lat in Tl0.1In x Co4Sb12 is due to the effective phonon scattering both by rattling of two atoms: Tl and In and by naturally formed nano-sized In2O3 particles (<50 nm). Since the combined approach of double filling and self-formed nanostructures could be applicable to various clathrate compounds, our results suggest a new strategy in the improvement of bulk TE materials.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 129.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Hardcover Book
USD 169.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. Rowe, D.M.: CRC Handbook of Thermoelectrics. CRC Press, New York (1995)

    Book  Google Scholar 

  2. Nolas, G.S., Sharp, J., Goldsmid, H.J.: Thermoelectrics: Basic Principles and New Materials Developments. Springer, New York (2001)

    Book  Google Scholar 

  3. Bell, L.E.: Science 321, 1457 (2008)

    Article  Google Scholar 

  4. Ioffe, A.F.: Semiconductor Thermoelements and Thermoelectric Cooling. Infosearch, London (1957)

    Google Scholar 

  5. Snyder, G.J., Toberer, E.S.: Nat. Mater. 7, 105 (2008)

    Article  Google Scholar 

  6. Uher, C. In: Tritt, T.M. (ed.) Recent Trends in Thermoelectric Materials Research I, Semiconductors and Semimetals, vol. 69, p. 139. Academic Press, San Diego (2001)

    Google Scholar 

  7. Jeitschko, W., Braun, D.: Acta Cryst. 33, 3401 (1977)

    Article  Google Scholar 

  8. Stetson, N.T., Kauzlarich, S.M., Hope, H.: J. Solid State Chem. 91, 140 (1991)

    Article  Google Scholar 

  9. Slack, G.A. In: Rowe, D.M. (ed.) CRC Handbook of Thermoelectrics. CRC Press, New York (1995)

    Google Scholar 

  10. Morelli, D.T., Meisner, G.P.: J. Appl. Phys. 77, 3777 (1995)

    Article  Google Scholar 

  11. Sales, B.C., Mandrus, D.G., Chakoumakos, B.C. In: Tritt, T.M. (ed.) Recent Trends in Thermoelectric Materials Research I, Semiconductors and Semimetals, vol. 69. Academic Press, San Diego (2001)

    Google Scholar 

  12. Kuznetsov, V.L., Kuznetsova, L.A., Rowe, D.M.: J. Phys. Condens. Matter 15, 5035 (2003)

    Article  Google Scholar 

  13. Nolas, G.S., Cohn, J.L., Slack, G.A.: Phys. Rev. B 58, 164 (1998)

    Article  Google Scholar 

  14. Nolas, G.S., Kaeser, M., Littleton, R.T., Tritt, T.M.: Appl. Phys. Lett. 77, 1855 (2000)

    Article  Google Scholar 

  15. Morelli, D.T., Meisner, G.P., Chen, B.X., Hu, S.Q., Uher, C.: Phys. Rev. B 56, 7376 (1997)

    Article  Google Scholar 

  16. Pei, Y.Z., Bai, S.Q., Zhao, X.Y., Zhang, W., Chen, L.D.: Solid State Sci. 10, 1422 (2008)

    Article  Google Scholar 

  17. Chen, L.D., Kawahara, T., Tang, X.F., Goto, T., Hirai, T., Dyck, J.S., Chen, W., Uher, C.: J. Appl. Phys. 90, 1864 (2001)

    Article  Google Scholar 

  18. Puyet, M., Lenoir, B., Dauscher, A., Dehmas, M., Stiewe, C., Muller, E.: J. Appl. Phys. 95, 4852 (2004)

    Article  Google Scholar 

  19. Zhao, X.Y., Shi, X., Chen, L.D., Zhang, W.Q., Zhang, W.B., Pei, Y.Z.: J. Appl. Phys. 99, 053711 (2006)

    Article  Google Scholar 

  20. Pei, Y.Z., Chen, L.D., Zhang, W., Shi, X., Bai, S.Q., Zhao, X.Y., Mei, Z.G., Li, X.Y.: Appl. Phys. Lett. 89, 221107 (2006)

    Article  Google Scholar 

  21. Pei, Y.Z., Yang, J., Chen, L.D., Zhang, W., Salvador, J.R., Yang, J.H.: Appl. Phys. Lett. 95, 042101 (2009)

    Article  Google Scholar 

  22. Sales, B.C., Chakoumakos, B.C., Mandrus, D.: Phys. Rev. B 61, 2475 (2000)

    Article  Google Scholar 

  23. Nolas, G.S., Takizawa, H., Endo, T., Sellinschegg, H., Johnson, D.C.: Appl. Phys. Lett. 77, 52 (2000)

    Article  Google Scholar 

  24. Nolas, G.S., Yang, J., Takizawa, H.: Appl. Phys. Lett. 84, 5210 (2004)

    Article  Google Scholar 

  25. Fukuoka, H., Yamanaka, S.: Chem. Mater. 22, 47 (2010)

    Article  Google Scholar 

  26. Harnwunggmoung, A., Kurosaki, K., Muta, H., Yamanaka, S.: Appl. Phys. Lett. 96, 202107 (2010)

    Article  Google Scholar 

  27. Keppens, V., Mandrus, D., Sales, B.C., Chakoumakos, B.C., Dai, P., Coldea, R., Maple, M.B., Gajewski, D.A., Freeman, E.J., Bennington, S.: Nature 395, 876 (1998)

    Article  Google Scholar 

  28. Hermann, R.P., Jin, R.J., Schweika, W., Grandjean, F., Mandrus, D., Sales, B.C., Long, G.: Phys. Rev. Lett. 90, 135505 (2003)

    Article  Google Scholar 

  29. Yang, J., Zhang, W., Bai, S.Q., Mei, Z., Chen, L.D.: Appl. Phys. Lett. 90, 192111 (2007)

    Article  Google Scholar 

  30. Shi, X., Kong, H., Li, C.P., Uher, C., Yang, J., Salvador, J.R., Wang, H., Chen, L., Zhang, W.: Appl. Phys. Lett. 92, 182101 (2008)

    Article  Google Scholar 

  31. Bai, S.Q., Pei, Y.Z., Chen, L.D., Zhang, W.Q., Zhao, X.Y., Yang, J.: Acta Mater. 57, 3135 (2009)

    Article  Google Scholar 

  32. Salvador, J.R., Yang, J., Wang, H., Shi, X.: J. Appl. Phys. 107, 043705 (2010)

    Article  Google Scholar 

  33. Zhao, W.Y., Wei, P., Zhang, Q.J., Dong, C.L., Liu, L.S., Tang, X.F.: J. Am. Chem. Soc. 131, 3713 (2009)

    Article  Google Scholar 

  34. Li, H., Tang, X.F., Zhang, Q.J., Uher, C.: Appl. Phys. Lett. 94, 102114 (2009)

    Article  Google Scholar 

  35. Harnwunggmoung, A., Kurosaki, K., Plirdpring, T., Sugahara, T., Ohishi, Y., Muta, H., Yamanaka, S.: J. Appl. Phys. 110, 013521 (2011)

    Article  Google Scholar 

  36. Yang, J., Hao, Q., Wang, H., Lan, Y.C., He, Q.Y., Minnich, A., Wang, D.Z., Harriman, J.A., Varki, V.M., Dresselhaus, M.S., Chen, G., Ren, Z.F.: Phys. Rev. B 80, 115329 (2009)

    Article  Google Scholar 

  37. He, T., Chen, J., Rosenfeld, H.D., Subramanian, M.A.: Chem. Mater. 18, 759 (2006)

    Article  Google Scholar 

  38. Mallik, R.C., Stiewe, C., Karpinski, G., Hassdorf, R., Muller, E.: J. Electron. Mater. 38, 1337 (2009)

    Article  Google Scholar 

  39. Xiong, Z., Chen, X., Huang, X., Bai, S., Chen, L.: Acta Mater. 58, 3995 (2010)

    Article  Google Scholar 

  40. Qiu, Y., Xi, L., Shi, X., Qiu, P., Zhang, W., Chen, L., Salvador, J.R., Cho, J.Y., Yang, J., Chien, Y., Chen, S., Tang, Y., Snyder, G.J.: Adv. Funct. Mater. 23, 3194 (2013)

    Google Scholar 

  41. Li, G., Kurosaki, K., Ohishi, Y., Muta, H., Yamanaka, S.J.: J. Electron. Mater. 42, 1463 (2013). doi:10.1007/s11664-012-2290-4

    Google Scholar 

  42. Caillat, T., Borshchevsky, A., Fleurial, J.-P.: J. Appl. Phys. 80, 4442 (1996)

    Article  Google Scholar 

  43. Harnwunggmoung, A., Kurosaki, K., Kosuga, A., Ishimaru, M., Plirdpring, T., Yimnirun, R., Jutimoosik, J., Rujirawat, S., Ohishi, Y., Muta, H., Yamanaka, S.: J. Appl. Phys. 112, 043509 (2012)

    Article  Google Scholar 

  44. Ballikaya, S., Wang, G., Sun, K., Uher, C.: J. Electron. Mater. 40, 570 (2011)

    Article  Google Scholar 

  45. Deng, L., Jia, X.P., Su, T.C., Zheng, S.Z., Guo, X., Jie, K., Ma, H.A.: Mater. Lett. 65, 2927 (2011)

    Article  Google Scholar 

  46. Poudel, B., Hao, Q., Ma, Y., Lan, Y., Minnich, A., Yu, B., Yan, X., Wang, D., Muto, A., Vashaee, D., Chen, X., Liu, J., Dresselhaus, M.S., Chen, G., Ren, Z.: Science 320, 634 (2008)

    Article  Google Scholar 

  47. Joshi, G., Lee, H., Lan, Y., Wang, X., Zhu, G., Wang, D., Gould, R.W., Cuff, D.C., Tang, M.Y., Dresselhaus, M.S., Chen, G., Ren, Z.: Nano Lett. 8, 4670 (2008)

    Article  Google Scholar 

Download references

Acknowledgments

This work was supported in part by a Grant-in-Aid for Scientific Research (No. 23686091) from the Ministry of Education, Culture, Sports, Science, and Technology, Japan. Additional support was kindly provided by the Rajamangala University of Technology Suvarnabhumi, Thailand, and the Government of Thailand.

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Ken Kurosaki .

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2014 Springer International Publishing Switzerland

About this chapter

Cite this chapter

Kurosaki, K., Harnwunggmoung, A., Yamanaka, S. (2014). Thermoelectric Properties of CoSb3 Based Skutterudites Filled by Group 13 Elements. In: Wang, X., Wang, Z. (eds) Nanoscale Thermoelectrics. Lecture Notes in Nanoscale Science and Technology, vol 16. Springer, Cham. https://doi.org/10.1007/978-3-319-02012-9_10

Download citation

  • DOI: https://doi.org/10.1007/978-3-319-02012-9_10

  • Published:

  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-02011-2

  • Online ISBN: 978-3-319-02012-9

  • eBook Packages: EnergyEnergy (R0)

Publish with us

Policies and ethics