Abstract
The present thesis investigated two fields which are relevant for the improvement of a memory device based on self-organized quantum dots. First, the electronic properties of QDs were studied by DLTS. From the measurements on different material systems, the key parameters, such as the hole localization energy and the apparent capture cross section were extracted. They were used to extrapolate the hole storage time at room temperature and industry standard temperature. Second, the coupling between a layer of self-assembled QDs and a 2DHG was investigated for samples with different coupling constants.
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Nowozin, T. (2014). Summary and Outlook. In: Self-Organized Quantum Dots for Memories. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-01970-3_8
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DOI: https://doi.org/10.1007/978-3-319-01970-3_8
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