Abstract
The following chapter presents in detail the results obtained by capacitance spectrocopy measurements for various GaSb/GaAs quantum dot and quantum ring samples, as well as for an In\(_{0.25}\)Ga\(_{0.75}\)As/GaAs/GaP quantum dot sample. The outcome of the measurements are the electronic properties which characterize the quantum systems in their ability to trap and release holes. The key parameters are the localization energy and the apparent capture cross section for holes.
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Nowozin, T. (2014). Electronic Properties of and Storage Times in Quantum Dots. In: Self-Organized Quantum Dots for Memories. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-319-01970-3_6
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DOI: https://doi.org/10.1007/978-3-319-01970-3_6
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