Abstract
In this contribution all the various definitions of the k⋅p parameters available in the literature are summarized, and equations that relate them to each other are provided. We believe that such a summary for both zinc blende and wurtzite crystals on a few pages is very useful, not only for beginners but also for experienced researchers that quickly want to look up conversion formulas. Results of k⋅p calculations for bulk semiconductors are shown for diamond, and for unstrained and strained InAs. Several examples of k⋅p calculations for heterostructures are presented. They cover spurious solutions, a spherical quantum dot and heterostructures showing the untypical type-II and type-III band alignments. Finally, self-consistent k⋅p calculations of a two-dimensional hole gas in diamond for different substrate orientations are analyzed. Wherever possible, the k⋅p results are compared to tight-binding calculations. All these calculations have been performed using the nextnano software (nextnano: The nextnano software can be obtained from http://www.nextnano.com; Birner et al., IEEE Trans. Electron Dev. 54:2137–2142, 2007). Therefore, this contribution provides some specific details that are relevant for a numerical implementation of the k⋅p method.
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Birner, S. (2014). The Multi-Band k⋅p Hamiltonian for Heterostructures: Parameters and Applications. In: Ehrhardt, M., Koprucki, T. (eds) Multi-Band Effective Mass Approximations. Lecture Notes in Computational Science and Engineering, vol 94. Springer, Cham. https://doi.org/10.1007/978-3-319-01427-2_6
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