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The DSL for III–V, Ternary and Quaternary Semiconductors Intense Electric Field

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Part of the book series: Springer Tracts in Modern Physics ((STMP,volume 255))

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Abstract

In this chapter, we study the DSL of III–V, ternary and quarternary semiconductors on the basis of newly formulated electron statistics in the presence of intense electric field. We also investigate the DSL under magnetic quantization, Quantum wells, nipi structures, inversion layers, effective mass superlattices under magnetic quantization, magneto superlattices with graded interfaces by formulating the respective expression of electron statistics. The Sect. 8.4 contains 44 open research problems.

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Correspondence to Kamakhya Prasad Ghatak .

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Ghatak, K.P., Bhattacharya, S. (2014). The DSL for III–V, Ternary and Quaternary Semiconductors Intense Electric Field. In: Debye Screening Length. Springer Tracts in Modern Physics, vol 255. Springer, Cham. https://doi.org/10.1007/978-3-319-01339-8_8

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