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Debye Screening Length pp 77–106Cite as

The DSL in Inversion Layers of Non-Parabolic Semiconductors

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Part of the book series: Springer Tracts in Modern Physics ((STMP,volume 255))

Abstract

This chapter investigates the DSL in n-channel inversion layers of non-linear optical, III–V, II–VI, IV–VI, stressed semiconductors, Ge and GaSb for both weak and strong electric field limits by formulating the new expression of surface electron statistics in each case. It has been observed that the inverse DSL increases with increasing surface electron field and decreasing alloy composition. In this simplified analysis we have investigated the DSL in the electric quantum limit and Sect. 3.4 contains 13 open research problems.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology, Jirania, Agartala, Tripura West, India

    Kamakhya Prasad Ghatak

  2. Department of Electrical Engineering, Shiv Nadar University, Noida, Uttar Pradesh, India

    Sitangshu Bhattacharya

Authors
  1. Kamakhya Prasad Ghatak
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  2. Sitangshu Bhattacharya
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Correspondence to Kamakhya Prasad Ghatak .

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Ghatak, K.P., Bhattacharya, S. (2014). The DSL in Inversion Layers of Non-Parabolic Semiconductors. In: Debye Screening Length. Springer Tracts in Modern Physics, vol 255. Springer, Cham. https://doi.org/10.1007/978-3-319-01339-8_3

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