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DSL in Heavily Doped Compound Semiconductors

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Debye Screening Length

Part of the book series: Springer Tracts in Modern Physics ((STMP,volume 255))

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Abstract

In this appendix we present the theoretical background for the DSL and the electron statistics in heavly doped non-linear optical, III–V, II–VI, IV–VI and stressed Kane type semiconductors on the basis of newly formulated E-k relation respectively. The Sect. 14A.3 contains forty open research problems.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology, Jirania, Agartala, Tripura West, India

    Kamakhya Prasad Ghatak

  2. Department of Electrical Engineering, Shiv Nadar University, Noida, Uttar Pradesh, India

    Sitangshu Bhattacharya

Authors
  1. Kamakhya Prasad Ghatak
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  2. Sitangshu Bhattacharya
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Correspondence to Kamakhya Prasad Ghatak .

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Ghatak, K.P., Bhattacharya, S. (2014). DSL in Heavily Doped Compound Semiconductors. In: Debye Screening Length. Springer Tracts in Modern Physics, vol 255. Springer, Cham. https://doi.org/10.1007/978-3-319-01339-8_14

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