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DSL in Compound Semiconductors and Their Nano-Structures Under Cross-Fields Configuration

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Debye Screening Length

Part of the book series: Springer Tracts in Modern Physics ((STMP,volume 255))

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Abstract

In this chapter we present the expressions of DSL and the electron statistics under cross field configuration in bluk specimens and ultra-thin flims of non-linear optical, III–V, II–VI, Bi, IV–VI and stressed Kane type semiconductors on the basis of newly formulated E-k relation respectively. Section 13.3 contains three open research problems.

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Correspondence to Kamakhya Prasad Ghatak .

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Ghatak, K.P., Bhattacharya, S. (2014). DSL in Compound Semiconductors and Their Nano-Structures Under Cross-Fields Configuration. In: Debye Screening Length. Springer Tracts in Modern Physics, vol 255. Springer, Cham. https://doi.org/10.1007/978-3-319-01339-8_13

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