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Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch

  • Viranjay M. Srivastava
  • Ghanshyam Singh
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Part of the Analog Circuits and Signal Processing book series (ACSP, volume 122)

Abstract

Established radio-frequency complementary metal-oxide-semiconductor (RF CMOS) switch contains MOSFET in its main architecture with 5.0 V of control voltage and requires high value of resistance in circuitry of the transceivers to detect the signal. To avoid the high value of control voltage and resistances, we have designed a novel double-pole four-throw (DP4T) RF switch by using the MOSFET technology and analyzed its performance in terms of drain currents and switching speed in the previous chapters. The reduction in sizing ratio of the gate dielectric, which works as a capacitor in the MOSFET, results in the increase of capacitance and speed of the device. However, this process has reached up to the limit where further reduction of SiO2 thickness increases the leakage current above the acceptable limit. This problem can be resolved by replacing SiO2 with materials having high dielectric constants. Hafnium dioxide (also known as Hafnia) is one of them, which has relatively large energy bandgap and a better thermal stability as compared to silicon [1]. It is a leading contender for new high-k gate dielectric films.

Keywords

Threshold Voltage Drain Current Debye Length Back Gate HfO2 Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Viranjay M. Srivastava
    • 1
  • Ghanshyam Singh
    • 1
  1. 1.Department of Electronics and Communication EngineeringJaypee University of Information TechnologySolanIndia

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