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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch pp 143–163Cite as

Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch

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Part of the book series: Analog Circuits and Signal Processing ((ACSP,volume 122))

Abstract

Established radio-frequency complementary metal-oxide-semiconductor (RF CMOS) switch contains MOSFET in its main architecture with 5.0 V of control voltage and requires high value of resistance in circuitry of the transceivers to detect the signal. To avoid the high value of control voltage and resistances, we have designed a novel double-pole four-throw (DP4T) RF switch by using the MOSFET technology and analyzed its performance in terms of drain currents and switching speed in the previous chapters. The reduction in sizing ratio of the gate dielectric, which works as a capacitor in the MOSFET, results in the increase of capacitance and speed of the device. However, this process has reached up to the limit where further reduction of SiO2 thickness increases the leakage current above the acceptable limit. This problem can be resolved by replacing SiO2 with materials having high dielectric constants. Hafnium dioxide (also known as Hafnia) is one of them, which has relatively large energy bandgap and a better thermal stability as compared to silicon [1]. It is a leading contender for new high-k gate dielectric films.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Jaypee University of Information Technology, Solan, Himachal Pradesh, India

    Viranjay M. Srivastava (Assistant Professor) & Ghanshyam Singh (Professor)

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  1. Viranjay M. Srivastava
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  2. Ghanshyam Singh
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Srivastava, V.M., Singh, G. (2014). Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch. In: MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch. Analog Circuits and Signal Processing, vol 122. Springer, Cham. https://doi.org/10.1007/978-3-319-01165-3_6

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  • DOI: https://doi.org/10.1007/978-3-319-01165-3_6

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