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Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET

  • Viranjay M. Srivastava
  • Ghanshyam Singh
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Part of the Analog Circuits and Signal Processing book series (ACSP, volume 122)

Abstract

In this chapter, we have designed a double-pole four-throw radio-frequency switch using double-gate (DP4T DG RF) MOSFET to operate at 0.1 GHz to few GHz frequency range for the advanced wireless communication systems. This switch mitigates attenuation of passing signals and exhibits high isolation to avoid misleading of simultaneously received signals. The symmetric DG MOSFET has been the focus of much attention for the application of RF switch due to its ability of strength to short-channel effects and improved current driving capability as discussed in the previous chapters.

Keywords

Phase Noise Insertion Loss Drain Current Return Loss Switching Speed 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Viranjay M. Srivastava
    • 1
  • Ghanshyam Singh
    • 1
  1. 1.Department of Electronics and Communication EngineeringJaypee University of Information TechnologySolanIndia

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