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Design of Double-Gate MOSFET

  • Viranjay M. Srivastava
  • Ghanshyam Singh
Chapter
  • 1k Downloads
Part of the Analog Circuits and Signal Processing book series (ACSP, volume 122)

Abstract

Recent progress to scale down the transistors to smaller dimensions provides the faster transistors, as well as lowers the effective density in terms of transistors area. The transistor scaling necessitates the integration of new device structures. The Double-Gate (DG) MOSFETs are example of this, which are capable for nanoscale integrated circuits due to their enhanced scalability compared to the bulk or Si-CMOS [1–5]. However, the better scalability can be achieved by introduction of a second gate at the other side of the body of transistor resulting in the double-gate structure. Due to excellent control of the short channel effects, double-gate devices have emerged as the device of choice for circuit design in sub-50 nm and below regime [6]. The low subthreshold leakage and higher ON-current in double-gate devices make them suitable for circuit design in sub-50 nm regime [7–10]. However, isolated or independent gate option can be useful for low power and mixed signal applications [11–15].

Keywords

Threshold Voltage Subthreshold Swing Short Channel Effect Back Gate Subthreshold Leakage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Viranjay M. Srivastava
    • 1
  • Ghanshyam Singh
    • 1
  1. 1.Department of Electronics and Communication EngineeringJaypee University of Information TechnologySolanIndia

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