Abstract
This paper describes a frequency synthesizer based on a MEMS resonator. Uniquely, the piezo-resistive properties of silicon are exploited to read out the resonator, resulting in low impedance levels at resonance frequencies up to several 100 MHz. A 55 MHz MEMS oscillator with a phase noise of −128 dBc/Hz @ 1 kHz offset and a −140 dBc/Hz noise floor has been realized. The oscillator is combined with a programmable PLL to realize a complete frequency synthesizer that can generate output frequencies ranging from 25 MHz to 200 MHz. It achieves ±20 ppm frequency accuracy over temperatures ranging from −20°C to +85°C, and draws 15 mA from a 2.5 V supply at an output frequency of 25 MHz.
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Acknowledgements
We would like to thank Harry Houterman, Friso Jedema, Sumy Jose, Erik-Jan Lous, Joost Melai, Edwin Orij, Nivesh Rai, Chris Rittersma, Kirsten Rongen, Jos Sistermans, Frank Swartjes, and Peter van der Velden from NXP for their contributions on product reliability, testability, and manufacturability. Many thanks go to Tjeu van Ansem and Peter Vermeeren from NXP, and AXIOM-IC for their help in ASIC design. Micha in’t Zandt from NXP, and IMEC are gratefully acknowledged for their support in processing the MEMS wafers.
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van Beek, J.T.M. et al. (2014). A Piezo-resistive, Temperature Compensated, MEMS-Based Frequency Synthesizer. In: Baschirotto, A., Makinwa, K., Harpe, P. (eds) Frequency References, Power Management for SoC, and Smart Wireless Interfaces. Springer, Cham. https://doi.org/10.1007/978-3-319-01080-9_2
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DOI: https://doi.org/10.1007/978-3-319-01080-9_2
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