Abstract
Near-infrared (NIR) Polariscopy has been used to find residual stresses in thin silicon wafers using phase shifting techniques. This paper describes the usage of the ten-step phase shifting method to measure the in-plane residual stresses in single- and multi-crystalline silicon wafers. We show how this technique can be applied to wafers without the application of external loading. The system is calibrated with a beam of monocrystalline CZ silicon loaded in an in-plane four-point bending fixture. The residual maximum shear stresses of the unloaded wafers are then determined. The shear difference technique is used for obtaining the normal stress values. Results are compared before and after smoothing of the isoclinic parameter, and its impact on the separated stress values is explained.
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Acknowledgement
The authors acknowledge the support of the Morris M. Bryan Jr. chair funds and Dr. Shreyes Melkote, Dr. Frank Mess, and Dr. Juris Kalejs for providing samples and illuminating discussions.
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© 2014 The Society for Experimental Mechanics, Inc.
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Skenes, K., Prasath, R.G.R., Danyluk, S. (2014). Polariscopy Measurement of Residual Stress in Thin Silicon Wafers. In: Rossi, M., et al. Residual Stress, Thermomechanics & Infrared Imaging, Hybrid Techniques and Inverse Problems, Volume 8. Conference Proceedings of the Society for Experimental Mechanics Series. Springer, Cham. https://doi.org/10.1007/978-3-319-00876-9_10
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DOI: https://doi.org/10.1007/978-3-319-00876-9_10
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