Abstract
We report on a defect tolerant extreme ultraviolet (EUV) nanopatterning method. This technique is capable of printing arbitrarily shaped features arranged into periodic arrays with sub-micron resolution. The method is based on the Talbot effect. Masks with different defect layouts were fabricated and tested producing defect free prints regardless of presence of large amount of defects covering up to 1 % of the area of the mask. Numerical simulation was conducted in very good agreement with the experimental data.
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Acknowledgements
This work was supported by the National Science Foundation, award ECCS 0901806, the NSF ERC for Extreme Ultraviolet Science and Technology, award EEC 0310717. This research was carried out in part at the Center for Functional Nanomaterials, Brookhaven National Laboratory, which is supported by the U.S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-98CH10886.
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Urbanski, L., Marconi, M.C., Isoyan, A., Stein, A., Menoni, C.S., Rocca, J.J. (2014). Defect Tolerant Talbot Nanopatterning. In: Sebban, S., Gautier, J., Ros, D., Zeitoun, P. (eds) X-Ray Lasers 2012. Springer Proceedings in Physics, vol 147. Springer, Cham. https://doi.org/10.1007/978-3-319-00696-3_42
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DOI: https://doi.org/10.1007/978-3-319-00696-3_42
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-00695-6
Online ISBN: 978-3-319-00696-3
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