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Modelling of Active Devices

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EMI-Resilient Amplifier Circuits

Part of the book series: Analog Circuits and Signal Processing ((ACSP,volume 118))

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Abstract

Active devices are the building blocks of (negative-feedback) amplifiers. There are three types of relevant active semiconductor devices: the bipolar junction transistor (bjt), the metal-oxide-semiconductor field-effect transistor (mosfet) and the field-effect transistor operating with a reverse biased gate-source junction. Both the junction field-effect transistor (JFET) and the metal-semiconductor field effect transistor (MESFET) belong to the latter type.

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Notes

  1. 1.

    Modern simulators like SPICE also use an extra capacitor to model the distributed collector-base capacitance (Hoefer and Nielinger 1985)

  2. 2.

    The effects of bias dependent \(U_{AF}\) can be analyzed by performing simulations using the MEXTRAM model (van der Toorn et al. 2008).

  3. 3.

    For increased accuracy in second-harmonic distortion analysis.

  4. 4.

    It is represented by \(I_K\) in the MEXTRAM model (van der Toorn et al. 2008). It should be noted that high-current effects are modelled more accurately in this model.

  5. 5.

    In case of some older bjt s \(b\) and \(c\) should be adjusted for a deviation of 3% \(\ldots \) 4%.

  6. 6.

    Note that \(\beta _{ac}\) may easily be determined by simulation.

  7. 7.

    The disagreement is not observed in FEThybrid-\(\pi \) models (van den Brink 1994).

  8. 8.

    Silicon dioxide is an insulator. The insulating layer separates the gate from the substrate. Therefore, these devices are also called insulated-gate FETs or IGFETs (Chirlian 1987).

  9. 9.

    Hence the name mosfet.

  10. 10.

    The error made in case of long-channel mosfets is less than 1 % (van Langevelde 1998)

  11. 11.

    \( U_{ds{sat}}\approx U_{ds{sat\infty }}= U_{gs}-U_{FB}+\frac{\gamma ^2}{2} -\gamma \sqrt{U_{gs}+U_{sb}-U_{FB}+\frac{\gamma ^2}{4}}-\varPhi _B\) when source and bulk are not short circuited.

  12. 12.

    The channel-length of short-channel mosfets is typically in the submicrometer range (Ytterdal et al. 2003). Section 3.4.2 presents an equation that can be used to determine whether a mosfet has a long or short-channel.

  13. 13.

    Again, a too low \(r_{ds}\) can be solved by cascoding the FET.

  14. 14.

    mosfetmodel 11 uses \(\alpha = 0.025\) and \(U_p= 50\,{\text {mV}}\) as default/typical values.

  15. 15.

    When \(U_{ds}-U_{dssat} = 5U_P\) the difference between (3.62) and (3.63) is less than 0.5 %.

  16. 16.

    This is consistent with the findings of van Langevelde (1998) and van Langevelde et al. (2003). In these publications is also shown that third harmonic distortion is maximal too when \(U_{dsQ}=U_{dssat}\).

  17. 17.

    Dispersion is thought to be related to the, e.g., trapping of carriers at the channel-substrate interface. Dispersion takes place at low frequencies. In the example given in Barclay (1996) at about 10 kHz.

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Authors and Affiliations

  1. Domein Techniek, Amsterdam University of Applied Sciences, Weesperzijde 190, 1097 DZ, Amsterdam, The Netherlands

    Marcel J. van der Horst

  2. Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, Mekelweg 4, 2628 CD, Delft, The Netherlands

    Wouter A. Serdijn

  3. Heart Center, Academic Medical Center, Meibergdreef 9, 1100 AZ, Amsterdam, The Netherlands

    André C. Linnenbank

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Correspondence to Marcel J. van der Horst .

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van der Horst, M.J., Serdijn, W.A., Linnenbank, A.C. (2014). Modelling of Active Devices. In: EMI-Resilient Amplifier Circuits. Analog Circuits and Signal Processing, vol 118. Springer, Cham. https://doi.org/10.1007/978-3-319-00593-5_3

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  • DOI: https://doi.org/10.1007/978-3-319-00593-5_3

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