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Power Semiconductor Devices in Power Electronic Applications

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Lateral Power Transistors in Integrated Circuits

Part of the book series: Power Systems ((POWSYS))

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Abstract

This chapter introduced topologies for power semiconductor devices and explains the suitability of lateral power MOSFETs for implementation in integrated circuits.

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Authors and Affiliations

  1. Lehrstuhl für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Erlangen, Germany

    Tobias Erlbacher

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  1. Tobias Erlbacher
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Correspondence to Tobias Erlbacher .

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© 2014 Springer International Publishing Switzerland

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Erlbacher, T. (2014). Power Semiconductor Devices in Power Electronic Applications. In: Lateral Power Transistors in Integrated Circuits. Power Systems. Springer, Cham. https://doi.org/10.1007/978-3-319-00500-3_4

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  • DOI: https://doi.org/10.1007/978-3-319-00500-3_4

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-00499-0

  • Online ISBN: 978-3-319-00500-3

  • eBook Packages: EnergyEnergy (R0)

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