Abstract
The rising cost and problems associated with ITO has led to a search for alternate transparent electrode (TE) material. Other TCO materials are being widely developed and in particular Al-doped ZnO (AZO) has received great attention in the recent years and has been considered as a promising alternative to ITO [1–4]. This material is particularly interesting because of its low cost and wide availability of its constituent raw materials. However, the environmental stability of AZO films is still an unsolved problem, leading to significantly increased electrical resistivity and surface degradation when the AZO is exposed to harsh environment (e.g., annealing in air or humidity damping).
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Ghosh, D.S. (2013). Ultrathin Metal Capped Al-Doped ZnO as Transparent Electrode. In: Ultrathin Metal Transparent Electrodes for the Optoelectronics Industry. Springer Theses. Springer, Heidelberg. https://doi.org/10.1007/978-3-319-00348-1_7
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