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Growth Mechanism of Carbon Nanowalls

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Carbon Nanowalls

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Abstract

In the case of film formation using plasma-enhanced chemical vapor deposition (CVD), high performance can be achieved by (1) the selective production of specific reactive species crucial for the film growth and nucleation, (2) the efficient transport of important species onto the growing surface, and (3) the control of surface reaction for both nucleation and subsequent growth. In the case of carbon nanostructure fabrication, it is important to elucidate the specific species such as carbon-containing radicals and hydrogen atoms that contribute to the growth and then determine the morphology of the nanostructures. Moreover, on the basis of the knowledge of the species, it is necessary to control the process plasma in order to obtain carbon nanostructures with structure and morphology customized for a specific application. Therefore, measurement of the radicals responsible for the formation of the carbon nanostructures is of great interest for practical applications. This chapter addresses issues on the growth mechanism of carbon nanowalls. Examples of radical density measurements in the plasma are described in the beginning. Then, the growth mechanisms of carbon nanowalls in the steady-state growth and nucleation stage are discussed. Furthermore, carbon nanowalls are synthesized using multi-beam CVD system consisting of ion, fluorocarbon radical, and H radical sources, and the role of ion bombardment for the nucleation of carbon nanowalls is discussed.

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, Meijo University, Tempaku, Nagoya, 468-8502, Nagoya, Japan

    Prof. Mineo Hiramatsu

  2. Department of Electrical Engineering and Computer Science, Nagoya University, Chikusa, Nagoya, 464-8603, Nagoya, Japan

    Prof. Masaru Hori

Authors
  1. Prof. Mineo Hiramatsu
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  2. Prof. Masaru Hori
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Correspondence to Mineo Hiramatsu .

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Hiramatsu, M., Hori, M. (2010). Growth Mechanism of Carbon Nanowalls. In: Carbon Nanowalls. Springer, Vienna. https://doi.org/10.1007/978-3-211-99718-5_5

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