Abstract
In this lecture, we present the basic mathematical and numerical tools for semiconductor device simulation using the Drift-Diffusion model. The Gummel’s decoupled fixed point map is first reviewed, and then the dual-mixed Formulation of the diffusion-advection-reaction (DAR) differential problems resulting from decoupling is considered. The Galerkin finite element discretization of the weak mixed form is discussed, with a proper treatment of the flux mass matrix that leads to a mixed finite volume approximation of the DAR equation. Several numerical examples are included to validate the proposed procedure.
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Sacco, R. (2009). Numerical Simulation of Charge Transport in Semiconductor Devices Using Mixed Finite Elements. In: Carstensen, C., Wriggers, P. (eds) Mixed Finite Element Technologies. CISM International Centre for Mechanical Sciences, vol 509. Springer, Vienna. https://doi.org/10.1007/978-3-211-99094-0_3
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DOI: https://doi.org/10.1007/978-3-211-99094-0_3
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