Abstract
We present a model for build-up of intrinsic stress during the deposition of thin metal films. The model assumes a three-phase stress generation mechanism which corresponds to three characteristic phases of microstructure evolution. The simulation results based on the model are successfully compared with experimental results for Poly-SiGe PECVD films. The impact of critical parameter variation on mechanical properties of thin film is discussed.
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References
B.W. Sheldon, A. Rajamani, A. Bhandari, E. Chason, S.K. Hong, and R. Beresford, “Competition Between Tensile and Compressive Stress Mechanisms During Volmer-Weber Growth of Aluminum Nitride Films,” J. Appl. Phy., vol.98, pp.435091–435099, 2005.
Ch. Hollauer, H. Ceric, and S. Selberherr, “Modeling of Intrinsic Stress Effects in Deposited Thin Films,” Eurosensors 20th Anniversary, vol.1, pp.324–325, 2006.
A. Witvrouw, M. Gromova, A. Mechta, S. Sedky, P. De Moor, K. Baert, and C. Van Hoof, “Poly-SiGe, a Superb Material for MEMS,” Proceedings of the MRS Fall Meeting, Boston, MA, USA, 1–5 December 2003.
A. Molfese, A. Mehta, and A. Witvrouw, “Determination of Stress Profile and Optimization of Stress Gradient in PECVD Poly-SiGe Films,” Sensors and Actuators A, vol.118, no.2., pp.313–321, 2005.
R.C. Cammarata, T.M. Trimble, and D.J. Srolovic, “Surface Stress Model for Intrinsic Stresses in Thin Films,” J. Mater. Res., vol.15, no. 11, 2000.
M. Platea, W. Brueckner, H. Wendrock, and R. Kaltofen, “Stress Evolution During and After Sputter Deposition of Cu Thin Films onto Si (100) Substrates under Various Sputtering Pressures,” J. Appl. Phy., vol.97, pp.549081–549087, 2005.
A. van der Drift, “Evolutionary Selection, a Principle Governing Growth Orientation in Vapor-Deposited Layers”, Philips Res. Repts, vol.22, pp.267–288, 1967.
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© 2007 Springer-Verlag Wien
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Ceric, H., Nentchev, A., Langer, E., Selberherr, S. (2007). Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth. In: Grasser, T., Selberherr, S. (eds) Simulation of Semiconductor Processes and Devices 2007. Springer, Vienna. https://doi.org/10.1007/978-3-211-72861-1_9
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DOI: https://doi.org/10.1007/978-3-211-72861-1_9
Publisher Name: Springer, Vienna
Print ISBN: 978-3-211-72860-4
Online ISBN: 978-3-211-72861-1
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