Abstract
The optimal device structures and channel orientation for nanoscale strained-Ge heterostructure p-MOSFETs, are discussed through detailed Band-to-band-tunneling (including band structure and quantum effects), Low-field Mobility (k.p and Boltzmann Transport), Full-Band Monte-Carlo, and 1-D Poisson -Schrödinger Simulations. The tradeoffs between drive current (ION), intrinsic delay (τ), band-to-band-tunneling (BTBT) leakage and short channel effects (SCE) have been systematically compared in high mobility strained-Ge Heterostructure FETs (H-FETs).
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Krishnamohan, T. et al. (2007). High Performance, Strained-Ge, Heterostructure p-MOSFETs. In: Grasser, T., Selberherr, S. (eds) Simulation of Semiconductor Processes and Devices 2007. Springer, Vienna. https://doi.org/10.1007/978-3-211-72861-1_5
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DOI: https://doi.org/10.1007/978-3-211-72861-1_5
Publisher Name: Springer, Vienna
Print ISBN: 978-3-211-72860-4
Online ISBN: 978-3-211-72861-1
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