Abstract
An electro-thermal, transient device simulation study of Silicon Carbide (SiC) power thyristors operating in a pulsed-power circuit at extremely high current density has been carried out within the drift-diffusion approximation and classical heat generation and transport theory using MEDICI* [1]. The convergence problems normally associated with Technology Computer-Aided Design (TCAD) simulations of SiC bipolar devices were overcome without artificially increasing the free carrier concentration by optical carrier generation, or by increasing the initial temperature (thermal carrier generation). The simulation results closely predict the actual operating conditions of the SiC thyristor in the pulsed-power circuit and are used to interpret the results of experimental failure limit studies [2]. It is shown that TCAD simulations can realistically predict the electrical and thermal properties of complex SiC bipolar semiconductor devices operating under fast transient, pulsed-power conditions.
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References
Synopsys Inc. TCAD Business Unit, MEDICI User’s Guide, Fremont, CA (2004).
H. O’Brien, W. Shaheen, and S. B. Bayne, Pulsed Power Switching of a 4 mm × 4 mm SiC Thyristor, Proceedings of the 15th IEEE Intl. Pulsed Power Conf., Monterey, CA, pp. 896–899 (2005).
B. J. Baliga, Silicon Carbide Power Devices, World Scientific Publishing Co (2006)
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© 2007 Springer-Verlag Wien
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Hillkirk, L.M., Hefner, A.R., Dutton, R.W., Bayne, S.B., O’Brien, H. (2007). Electro-Thermal, Transient, Mixed-Mode 2D Simulation Study of SiC Power Thyristors Operating Under Pulsed-Power Conditions. In: Grasser, T., Selberherr, S. (eds) Simulation of Semiconductor Processes and Devices 2007. Springer, Vienna. https://doi.org/10.1007/978-3-211-72861-1_43
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DOI: https://doi.org/10.1007/978-3-211-72861-1_43
Publisher Name: Springer, Vienna
Print ISBN: 978-3-211-72860-4
Online ISBN: 978-3-211-72861-1
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